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FDS9412A N-Channel PowerTrench(R) MOSFET
February 2006
FDS9412A N-Channel PowerTrench(R) MOSFET
30V, 8A, 21m General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switiching PWM controllers. It has been optimized for low gate charge ,low rDS(on) and fast switching speed.
Features
Max rDS(on) = 21m at VGS = 10V, ID = 8A Max rDS(on) = 25m at VGS = 4.5V, ID = 6.6A Low gate charge RoHS Compliant
Application
DC/DC converters
D
D
D
D
5 6 4 3 2 1
SO-8
S
S
S
G
7 8
MOSFET Maximum Ratings TA = 25C unless otherwise noted
Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous (TA = 25C, VGS = 10V, RJA = 50C/W ) -Continuous (TA = 25C, VGS = 4.5V, RJA = 50C/W ) -Pulsed Single Pulse Avalanche Energy Power dissipation Operating and Storage Temperature (Note 3) Ratings 30 20 8 6.6 30 54 2.5 -55 to 150 A mJ W C Units V V A
Thermal Characteristics
RJC RJA Thermal Resistance , Junction to Case Thermal Resistance , Junction to Ambient (Note 1) (Note 1a) 25 50 C/W C/W
Package Marking and Ordering Information
Device Marking FDS9412A Device FDS9412A Package SO-8 Reel Size 330mm Tape Width 12mm Quantity 2500 units
(c)2006 Fairchild Semiconductor Corporation FDS9412A Rev. A1
1
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FDS9412A N-Channel PowerTrench(R) MOSFET
Electrical Characteristics TJ = 25C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BVDSS BVDSS TJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = 250A, VGS = 0V ID = 250A, referenced to 25C VDS = 24V, VGS = 0V VGS = 20V TJ = 150C 30 22 1 250 100 V mV/C A A
On Characteristics (Note 2)
VGS(th) VGS(th) TJ rDS(on) Gate to Source Threshold Voltage Gate to Source Threshold Voltage Temperature Coefficient VGS = VDS, ID = 250A ID = 250A, referenced to 25C VGS =10V , ID = 8A Drain to Source On Resistance VGS = 4.5V, ID = 6.6A VGS = 10V, ID = 8A TJ = 150oC 1.2 1.9 -5.8 14 18 20 21 25 30 m 2.5 V mV/C
Dynamic Characteristics
Ciss Coss Crss RG Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance VDS =15V, VGS = 0V, f = 1MHz f = 1MHz 740 150 95 3 985 200 145 pF pF pF
Switching Characteristics (Note 2)
td(on) tr td(off) tf Qg Qg Qgs Qgd Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge at 10V Total Gate Charge at 5V Gate to Source Gate Charge Gate to Drain "Miller" Charge VGS = 0V to 10V VGS = 0V to 5V VDD = 15V ID = 8A IG= 1.0mA VDD = 15V, ID = 1A VGS = 10V, RGS = 6 5 13 13 12 14 8 2.3 3.0 10 23 24 22 20 12 ns ns ns ns nC nC nC nC
Drain-Source Diode Characteristics
VSD trr Qrr Source to Drain Diode Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0V, IS = 8A VGS = 0V, IS = 2.1A IF = 8A, di/dt = 100A/s IF = 8A, di/dt = 100A/s 0.85 0.76 18 9.6 1.25 1.0 27 14 V V ns nC
Notes: 1: RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design. a) 50C/W when mounted on a 1 in2 pad of 2 oz copper b)105C/W when mounted on a .04 in2 pad of 2 oz copper c) 125C/W when mounted on a minimun pad
Scale 1 : 1 on letter size paper
2: Pulse Test:Pulse Width <300s, Duty Cycle <2.0%. 3: Starting TJ = 25oC, L = 3mH, IAS = 6A, VDD = 30V, VGS = 10V.
2 FDS9412A Rev. A1
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FDS9412A N-Channel PowerTrench(R) MOSFET
Typical Characteristics TJ = 25C unless otherwise noted
16
ID, DRAIN CURRENT (A)
VGS = 4.5V VGS = 3.5V
3.0
NORMALIZED DRAIN TO SOURCE ON-RESISTANCE
VGS = 10V
PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX
VGS = 3V
12
2.5 2.0
VGS = 3.5V
PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX
8
VGS = 3V
1.5 1.0 0.5
VGS = 4.5V
VGS = 10V
4
0
0
1 2 3 VDS, DRAIN TO SOURCE VOLTAGE (V)
4
0
4
8
12
16
ID, DRAIN CURRENT(A)
Figure 1. On Region Characteristics
Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage
50
rDS(on), ON-RESISTANCE (m)
NORMALIZED DRAIN TO SOURCE ON-RESISTANCE
1.6 1.4 1.2 1.0 0.8 0.6 -80
ID = 8.0A VGS = 10V
40 30
PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX
ID =8.0A
TJ = 150oC
20 10 0 3.0
TJ = 25oC
-40 0 40 80 120 TJ, JUNCTION TEMPERATURE (oC)
160
4.5 6.0 7.5 9.0 VGS, GATE TO SOURCE VOLTAGE (V)
10
Figure 3. Normalized On Resistance vs Junction Temperature
16
Figure 4. On-Resistance vs Gate to Source Voltage
50
ID, DRAIN CURRENT (A)
PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX
IS, REVERSE DRAIN CURRENT (A)
VGS = 0V
10 1 0.1 0.01 1E-3 0.0
TJ = 150oC
12
TJ = 150oC
8
TJ = 25oC
TJ = 25oC
4
TJ = -55oC
TJ = -55oC
0 1.0
1.5 2.0 2.5 3.0 3.5 VGS, GATE TO SOURCE VOLTAGE (V)
4.0
0.2 0.4 0.6 0.8 1.0 VSD, BODY DIODE FORWARD VOLTAGE (V)
1.2
Figure 5. Transfer Characteristics
Figure 6. Source to Drain Diode Forward Voltage vs Source Current
3 FDS9412A Rev. A1
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FDS9412A N-Channel PowerTrench(R) MOSFET
Typical Characteristics TJ = 25C unless otherwise noted
VGS, GATE TO SOURCE VOLTAGE(V)
10
VDD = 15V
1200 1000
Ciss
8
CAPACITANCE (pF)
800 600 400 200
10
Crss Coss
6 4 2 0
ID = 8A
ID = 1A
f = 1MHz VGS = 0V
0
4 8 12 Qg, GATE CHARGE(nC)
16
0.1
1 10 VDS, DRAIN TO SOURCE VOLTAGE (V)
30
Figure 7. Gate Charge Characteristics
10
IAS, AVALANCHE CURRENT(A)
Figure 8. Capacitance vs Drain to Source Voltage
10
ID, DRAIN CURRENT (A)
8 6
VGS = 10V
TJ =
25oC
VGS = 4.5V
4 2 0 25
RJA = 50 C/W
o
TJ = 125oC
1 -2 10
10
-1
10 10 tAV, TIME IN AVALANCHE(ms)
0
1
10
2
50 75 100 125 TA, AMBIENT TEMPERATURE(oC)
150
Figure 9. Unclamped Inductive Switching Capability
100
ID, DRAIN CURRENT (A)
Figure 10. Maximum Continuous Drain Current vs Ambient Temperature
10000
P(PK), PEAK TRANSIENT POWER (W)
VGS = 10V
TA = 25oC FOR TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS:
10
100s
1000
1
1ms 10ms 1s 10s DC
100
I = I25
150 - T A ---------------------125
0.1
OPERATION IN THIS AREA MAY BE LIMITED BY RDS(ON)
0.01 0.1
SINGLE PULSE TJ=MAX RATED TA=25oC
10
SINGLE PULSE
1 10 VDS, DRAIN TO SOURCE VOLTAGE (V)
100
1 -5 10
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
3
t, PULSE WIDTH (s)
Figure 11. Forward Bias Safe Operating Area
Figure 12. Single Pulse Maximum Power Dissipation
4 FDS9412A Rev. A1
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FDS9412A N-Channel PowerTrench(R) MOSFET
Typical Characteristics TJ = 25C unless otherwise noted
2 1 NORMALIZED THERMAL IMPEDANCE, ZJA
DUTY CYCLE-DESCENDING ORDER
0.1
D = 0.5 0.2 0.1 0.05 0.02 0.01
PDM
t1 t2
0.01
SINGLE PULSE
NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJA x RJA + TA
1E-3 -5 10
10
-4
10
-3
10 10 10 t, RECTANGULAR PULSE DURATION(s)
-2
-1
0
10
1
10
2
10
3
Figure 13. Transient Thermal Response Curve
5 FDS9412A Rev. A1
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The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
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Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. I18

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